publication date : oct 2011 1 index mark [gate] 1 . 8 + / - 0 . 1 0 . 7 + / - 0 . 1 terminal no. (a)drain [output] (b)source [gnd] (c)gate [input] (d)source (b) (b) 0.95+/-0.2 2.6+/-0.2 4 . 2 + / - 0 . 2 5 . 6 + / - 0 . 2 7.0+/-0.2 (c) 0 . 6 5 + / - 0 . 2 (a) 8.0+/-0.2 6 . 2 + / - 0 . 2 notes: 1. ( ) typical value unit:mm (d) 0.2+/-0.05 top view side view bottom view side view ( 3 . 6 ) (4.5) s t a n d o f f = m a x 0 . 0 5 detail a detail a < silicon rf power mos fet ( discrete ) > rd 12mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w description rd12mvp1 is a mos fet type transistor specifically designed for v hf rf power amplifiers applications. features ? high p ower g a in pout> 10 w, gp> 13 db@vdd= 7.2 v,f= 175m hz ? high efficiency: 55 % min . (175mhz) ? no gate protection diode application for output stage of high power amplifiers in v hf band mobile radio sets. rohs compliant rd12mvp1 is a rohs complian t product. rohs compl iance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solder s (i.e. tin - lead older alloys containing more than85% lead.) absolute maximum ratings ( tc=25 c , unless otherwise noted ) symbol parameter conditions ratings unit v dss drain to s ource v oltage v gs =0v 50 v v gss gate to s ource v oltage v ds =0v - 5 to +20 v id drain c urrent 4.0 a pin input power zg=zl=50 ? 1.0 w pch channel d issipation tc=25 c 125 w tj junction temperature +150 c tstg storage t emperature - 40 to +1 25 c rthj - c thermal resistance junction to case 1.5 c/w note: above parameters are gu aranteed independently. outline drawing
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 2 electrical characteristics ( tc=25 c , unless otherwise noted ) limits unit symbol parameter conditions min . typ . max. i dss zero gate voltage drain current v ds =1 7 v, v gs =0v - - 10 u a i gss gate to source leak current v gs =10v, v ds =0v - - 1 .0 u a v th gate t hreshold voltage v ds = 12 v, i ds =1ma 1.8 - 4.4 v pout output power 10 12 - w ? d drain efficiency f=175mhz,v d d = 7.2 v pin= 0.5w,idq=1.0a 55 57 - % vswrt load vswr tolerance v d d =9.5v,po=10w( pin control ) f=175mhz,idq=1.0a,zg=50 ? lo ad vswr=20:1(all phase) no destroy - note: above parameters, ratings, limits and conditions are subject to change.
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 3 typical characteristics channel dissipation vs. ambient temperature 0 10 20 30 40 50 60 0 40 80 120 160 200 ambient temperature ta(deg:c.) c h a n n e l d i s s i p a t i o n p c h ( w ) , , , on pcb with termal sheet and heat-sink (size : 41 x 55mm, t=7.2 mm) *pcb: glass epoxy (size : 46.4 x 40.0mm, t=0.8 mm) thermal sheet: geltec cooh-4000(t=0.5mm) free air vgs-ids characteristics 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 vgs(v) i d s ( a ) ta =+ 25 c vds=10v ids vds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c i s s ( p f ) ta =+ 25 c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 vds(v) c o s s ( p f ) ta =+ 25 c f=1mhz vds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c r s s ( p f ) ta =+ 25 c f=1mhz vds-ids characteristics 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 vds(v) i d s ( a ) ta =+ 25 c vgs=7.5v vgs=6.5v vgs=5.5v vgs=4.5v
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 4 typical characteristics pin-po characteristics @f=175mhz 0 10 20 30 40 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 d ( % ) ta=+25c f=175mhz vdd=7.2v idq=1.0a po gp pin-po characteristics @f=175mhz 0 2 4 6 8 10 12 14 0.0 0.5 1.0 1.5 pin(w) p o u t ( w ) , i d d ( a ) 20 30 40 50 60 70 80 90 d ( % ) po d idd ta=25c f=175mhz vdd=7.2v idq=1.0a vdd-po characteristics @f=175mhz 5 10 15 20 25 30 4 6 8 10 12 vdd(v) p o ( w ) 1 2 3 4 5 6 i d d ( a ) po idd ta=25c f=175mhz pin=0.6w idq=1.0a zg=zi=50 ohm
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 5 test circuit ( f=175mhz) 3.5mm 14mm 330pf 4.7kohm c1 c2 24pf 12mm w w rd12mvp1 175mhz l1 100pf 17mm 3mm vdd vgg rf-in rf-out 47pf 9.5mm l2 68pf note:boad material glass-epoxy substrate micro strip line width=1.3mm/50 ohm er:4.8 t=0.8mm w:line width=1.0mm l:enameled wire l1:4turns d:0.43mm 1.66 mm(outside diameter) l2:6turns d:0.43mm 2.46 mm(outside diameter) c1 c2:2200 f 3mm 47pf 9mm 330pf 19mm 19mm 22 f,50v
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 6 rd12mvp1 s-parameter data (@vdd=7.2v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.782 -165.5 6.105 69.0 0.024 -16.8 0.743 -162.7 125 0.801 -166.9 4.716 62.4 0.022 -20.5 0.766 -164.0 150 0.817 -168.0 3.724 56.4 0.021 -25.7 0.783 -165.6 175 0.833 -168.8 3.023 51.6 0.019 -27.3 0.799 -166.4 200 0.847 -169.7 2.519 47.5 0.016 -31.1 0.825 -167.2 225 0.860 -170.6 2.137 43.5 0.015 -30.0 0.845 -167.7 250 0.872 -171.6 1.828 39.6 0.013 -34.0 0.864 -168.6 275 0.882 -172.4 1.569 36.0 0.012 -30.9 0.871 -169.6 300 0.894 -173.0 1.361 33.4 0.010 -31.7 0.879 -170.4 325 0.901 -173.5 1.193 31.0 0.008 -24.1 0.888 -171.3 350 0.910 -174.2 1.062 28.5 0.007 -20.9 0.901 -172.1 375 0.917 -175.2 0.947 25.9 0.006 -13.8 0.915 -172.9 400 0.918 -176.1 0.844 23.5 0.005 -1.5 0.918 -173.6 425 0.923 -176.7 0.756 21.5 0.004 16.0 0.917 -174.4 450 0.930 -177.2 0.683 20.4 0.005 35.4 0.922 -174.8 475 0.933 -177.7 0.623 18.7 0.005 43.3 0.928 -175.5 500 0.938 -178.1 0.568 17.2 0.006 53.6 0.935 -176.3 525 0.939 -178.8 0.520 15.7 0.007 58.5 0.943 -176.8 550 0.942 -179.3 0.477 14.3 0.008 63.6 0.941 -177.1 575 0.943 179.7 0.439 13.3 0.009 68.8 0.941 -177.8 600 0.946 179.5 0.407 12.2 0.011 73.9 0.945 -178.3 625 0.950 179.1 0.378 11.3 0.011 72.4 0.949 -178.9 650 0.950 178.8 0.350 10.4 0.012 74.8 0.950 -179.5 675 0.953 178.3 0.327 9.8 0.013 79.1 0.952 -179.8 700 0.952 177.9 0.306 8.9 0.014 77.0 0.954 179.8 725 0.954 177.5 0.286 8.3 0.015 77.2 0.951 179.4 750 0.955 176.9 0.268 7.7 0.016 79.2 0.955 178.9 775 0.954 176.4 0.252 7.2 0.018 78.9 0.957 178.6 800 0.955 176.3 0.238 7.0 0.018 79.9 0.958 178.1 825 0.958 175.9 0.225 6.4 0.020 78.9 0.961 177.7 850 0.958 175.6 0.213 5.9 0.021 80.1 0.954 177.5 875 0.956 175.1 0.203 5.5 0.022 79.0 0.960 177.3 900 0.958 174.5 0.192 5.3 0.023 79.6 0.958 176.8 925 0.956 174.3 0.182 5.3 0.024 79.3 0.962 176.4 950 0.958 174.0 0.175 5.3 0.025 78.3 0.964 176.0 975 0.957 173.8 0.166 5.2 0.026 80.7 0.964 176.0 1000 0.959 173.6 0.158 5.7 0.026 78.8 0.962 175.8 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 7 rd12mvp1 s-parameter data (@vdd=7.2v, id=900ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.799 -169.4 5.980 72.2 0.021 -11.2 0.757 -166.6 125 0.813 -170.7 4.690 65.9 0.020 -14.9 0.780 -167.5 150 0.825 -171.3 3.726 60.1 0.019 -17.2 0.785 -168.8 175 0.835 -171.9 3.045 55.9 0.017 -21.5 0.794 -169.3 200 0.846 -172.5 2.569 52.3 0.016 -22.4 0.821 -169.3 225 0.857 -173.4 2.206 48.4 0.015 -21.1 0.846 -169.5 250 0.868 -174.3 1.904 44.3 0.013 -21.2 0.863 -170.4 275 0.877 -174.9 1.648 40.7 0.011 -21.3 0.864 -170.9 300 0.886 -175.3 1.436 38.2 0.010 -19.9 0.864 -171.4 325 0.895 -175.7 1.270 35.8 0.009 -15.8 0.876 -172.0 350 0.900 -176.4 1.141 33.1 0.008 -11.9 0.891 -172.6 375 0.907 -177.3 1.023 30.4 0.007 -7.2 0.906 -173.1 400 0.909 -178.1 0.917 27.7 0.007 1.3 0.915 -173.9 425 0.913 -178.7 0.820 25.8 0.005 20.2 0.908 -174.4 450 0.921 -179.1 0.745 24.6 0.006 27.4 0.910 -174.5 475 0.925 -179.6 0.683 23.0 0.006 36.9 0.921 -175.2 500 0.932 -180.0 0.627 21.2 0.007 50.8 0.933 -175.9 525 0.931 179.2 0.575 19.4 0.007 53.6 0.937 -176.6 550 0.933 178.6 0.529 18.1 0.008 57.3 0.935 -176.8 575 0.937 178.0 0.486 16.6 0.009 67.9 0.931 -177.0 600 0.943 177.7 0.452 16.1 0.010 70.4 0.935 -177.4 625 0.943 177.3 0.422 14.9 0.011 70.9 0.945 -178.0 650 0.946 177.0 0.391 14.0 0.013 73.8 0.948 -178.6 675 0.947 176.6 0.366 12.7 0.013 75.6 0.946 -179.0 700 0.946 175.9 0.341 12.0 0.015 76.9 0.946 -179.3 725 0.951 175.5 0.322 11.3 0.015 75.8 0.945 -179.6 750 0.949 175.0 0.302 10.5 0.016 76.4 0.949 179.9 775 0.951 174.7 0.284 9.6 0.017 77.8 0.952 179.4 800 0.950 174.5 0.269 9.3 0.019 79.0 0.955 179.0 825 0.956 174.3 0.253 9.2 0.020 77.8 0.954 178.9 850 0.956 173.7 0.240 8.7 0.020 78.7 0.950 178.9 875 0.956 173.3 0.228 7.9 0.021 78.7 0.952 178.4 900 0.953 172.8 0.218 7.1 0.023 77.3 0.953 177.9 925 0.948 172.5 0.206 6.6 0.024 76.8 0.958 177.4 950 0.955 172.2 0.196 7.0 0.024 78.3 0.959 177.3 975 0.955 172.0 0.186 7.3 0.025 78.6 0.958 177.4 1000 0.957 171.8 0.178 7.1 0.026 79.1 0.956 177.1 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd1 2mvp1 rohs compliance, silicon mosfet power transistor , 175mhz, 1 0 w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give du e consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. n otes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual p roperty rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any produc t data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on product s at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corpora tion assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? plea se contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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